feb.1999 mitsubishi semiconductor thyristor ? cr3pm low power use insulated type, glass passivation type cr3pm application tv sets, control of household equipment such as electric blankets, other general purpose control applications ] 1. with gate to cathode resistance r gk =220 w . ?i t (av) ........................................................................... 3a ?v drm ..............................................................400v/600v ?i gt ......................................................................... 100 m a ?v iso ........................................................................ 1500v ? ul recognized: file no. e80276 symbol i t (rms) i t (av) i tsm i 2 t p gm p g (av) v fgm v rgm i fgm t j t stg v iso parameter rms on-state current average on-state current surge on-state current i 2 t for fusing peak gate power dissipation average gate power dissipation peak gate forward voltage peak gate reverse voltage peak gate forward current junction temperature storage temperature weight isolation voltage conditions commercial frequency, sine half wave, 180 conduction, t c =103 c 60hz sine half wave 1 full cycle, peak value, non-repetitive value corresponding to 1 cycle of half wave 60hz, surge on-state current typical value t a =25 c, ac 1 minute, each terminal to case unit a a a a 2 s w w v v a c c g v ratings 4.7 3.0 70 24.5 0.5 0.1 6 6 0.3 C40 ~ +125 C40 ~ +125 2.0 1500 symbol v rrm v rsm v r (dc) v drm v d (dc) parameter repetitive peak reverse voltage non-repetitive peak reverse voltage dc reverse voltage repetitive peak off-state voltage ] 1 dc off-state voltage ] 1 voltage class unit v v v v v maximum ratings (t a =25 c, unless otherwise noted) 8 400 500 320 400 320 12 600 720 480 600 480 outline drawing dimensions in mm to-220f type name voltage class f 3.2?.2 1.3 max 0.8 2.54 13.5 min 3.6 5.0 1.2 8.5 10.5 max 5.2 4.5 23 1 2 1 3 1
2
3 cathode anode gate 17 2.54 2.8 0.5 2.6 * measurement point of case temperature
feb.1999 mitsubishi semiconductor thyristor ? cr3pm low power use insulated type, glass passivation type symbol i rrm i drm v tm v gt v gd i gt r th (j-c) test conditions t j =125 c, v rrm applied, r gk =220 w t j =125 c, v drm applied, r gk =220 w t c =25 c, i tm =10a, instantaneous value t j =25 c, vd=6v, i t =0.1a t j =125 c, v d =1/2v drm , r gk =220 w t j =25 c, v d =6v, i t =0.1a junction to case ] 2 unit ma ma v v v m a c/w typ. parameter repetitive peak reverse current repetitive peak off-state current on-state voltage gate trigger voltage gate non-trigger voltage gate trigger current thermal resistance limits min. 0.1 1 max. 2.0 2.0 1.6 0.8 100 ] 3 4.1 electrical characteristics 10 0 23 5710 1 40 20 23 5710 2 44 60 80 100 30 10 50 70 90 0 3.8 0.6 1.4 2.2 3.0 1.0 1.8 2.6 3.4 10 2 7 5 3 2 10 1 7 5 3 2 10 0 7 5 3 2 10 ? t c = 25? maximum on-state characteristics on-state current (a) on-state voltage (v) rated surge on-state current surge on-state current (a) conduction time (cycles at 60hz) performance curves ] 2. the contact thermal resistance r th (c-f) is 0.5 c/w with greased. ] 3. if special values of i gt are required, choose at least two items from those listed in the table below. (example: ab, bc) b 20 ~ 50 c 40 ~ 100 item i gt ( m a) a 1 ~ 30 the above values do not include the current flowing through the 220 w resistance between the gate and cathode.
feb.1999 mitsubishi semiconductor thyristor ? cr3pm low power use insulated type, glass passivation type 10 0 5710 0 23 5710 1 23 5710 2 23 23 10 ? 7 10 ? 7 5 5 3 2 10 1 7 5 3 2 10 2 7 5 3 2 v fgm = 6v v gt = 0.8v i gt = 200? (t j = 25?) i fgm = 0.3a p gm = 0.5w v gd = 0.1v p g(av) = 0.1w 23 10 0 5710 1 23 5710 2 23 5710 3 10 0 23 10 ? 5710 ? 23 5710 ? 23 5710 0 10 2 7 5 3 2 10 1 7 5 3 2 7 5 3 2 10 ? 120 60 ?0 ?0 0 20 40 80 100 10 3 7 5 3 2 10 2 7 5 3 2 10 1 7 5 3 2 10 0 # 2 # 1 i gt (25?) # 1 45? # 2 18? typical example 1.0 0.7 0.6 0.3 0.2 0 120 ?0 ?0 20 80 0.1 0.5 0.4 0.8 0.9 060 40 100 typical example distribution 8 6 3 2 1 7 5 4 0 5.0 0 1.0 4.0 2.0 3.0 q 360 q = 30 60 120 90 180 resistive, inductive loads 160 120 60 40 20 140 100 80 0 5.0 0 1.0 4.0 2.0 3.0 q = 30 120 60 90 180 q 360 resistive, inductive loads maximum average power dissipation (single-phase half wave) average power dissipation (w) average on-state current (a) gate trigger voltage vs. junction temperature gate trigger voltage ( v ) junction temperature (?) allowable case temperature vs. average on-state current (single-phase half wave) case temperature (?) average on-state current (a) maximum transient thermal impedance characteristics (junction to case) transient thermal impedance (?/ w) time (s) gate voltage (v) gate current (ma) gate trigger current vs. junction temperature junction temperature (?) gate characteristics 100 (%) gate trigger current (t j = t?) gate trigger current (t j = 25?)
feb.1999 mitsubishi semiconductor thyristor ? cr3pm low power use insulated type, glass passivation type ?0 ?0 0 20 40 60 80 100 120 140 160 160 0 80 100 120 140 40 60 20 r gk = 220 w typical example 160 60 ?0 ?0 0 20 40 80 100 120 140 10 2 7 5 3 2 10 1 7 5 3 2 10 0 7 5 3 2 10 ? v d = 12v r gk = 1k w typical example distribution 160 120 60 40 20 140 100 80 0 1.6 0 0.4 0.8 1.2 1.4 0.2 0.6 1.0 q 360 q = 180 90 120 60 30 natural convection without fin resistive, inductive loads 8 6 3 2 1 7 5 4 0 5.0 0 4.0 1.0 2.0 3.0 q q 360 resistive loads q = 30 60 90 180 120 160 120 60 40 20 140 100 80 0 5.0 0 4.0 1.0 2.0 3.0 q q 360 resistive loads 180 60 90 q = 30 120 160 120 60 40 20 140 100 80 0 1.6 0 0.4 0.8 1.2 1.4 0.2 0.6 1.0 q q 360 resistive loads natural convection without fin q = 180 90 120 60 30 allowable ambient temperature vs. average on-state current (single-phase half wave) ambient temperature (?) average on-state current (a) maximum average power dissipation (single-phase full wave) average power dissipation (w) average on-state current (a) allowable ambient temperature vs. average on-state current (single-phase full wave) ambient temperature (?) average on-state current (a) allowable case temperature vs. average on-state current (single-phase full wave) case temperature (?) average on-state current (a) breakover voltage vs. junction temperature junction temperature (?) 100 (%) breakover voltage ( t j = t c ) breakover voltage ( t j = 25 ? ) holding current vs. junction temperature holding current (ma) junction temperature (?)
feb.1999 mitsubishi semiconductor thyristor ? cr3pm low power use insulated type, glass passivation type 10 ? 10 1 7 5 3 2 10 0 23 5710 1 10 0 7 5 3 2 23 5710 2 4 4 44 # v d = 100v t a = 25? typical example i gt (25?) # 33? 10 2 23 10 0 5710 1 23 5710 2 23 5710 3 10 4 7 5 3 2 10 3 7 5 3 2 7 5 3 2 10 1 0.1s tw typical example ?0 ?0 0 20 40 60 80 100 120 140 160 160 0 80 100 120 140 40 60 20 typical example 23 10 ? 5710 0 23 5710 1 23 5710 2 400 0 200 250 300 350 100 150 50 # 2 # 1 i gt (25?) # 1 25? # 2 50? typical example 80 60 30 20 10 70 50 40 0 160 0 40 80 120 140 20 60 100 i t = 2a v d = 50v, v r = 50v dv/dt = 5v/? typical example distribution holding current vs. gate to cathode resistance gate to cathode resistance (k w ) 100 (%) holding current ( r gk = r k w ) holding current ( r gk = 1k w ) gate trigger current vs. gate current pulse width gate current pulse width (?) 100 (%) gate trigger current ( tw ) gate trigger current ( dc ) repetitive peak reverse voltage vs. junction temperature junction temperature (?) turn-on time vs. gate current turn-on time (?) gate current (ma) turn-off time vs. junction temperature turn-off time (?) junction temperature (?) 100 (%) repetitive peak reverse voltage (t j = t c ) repetitive peak reverse voltage (t j = 25 ? )
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